Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applications-Reference-Cited by-同舟云学术

Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applications

Published:2009-07 Issue:7-9 Volume:86 Page:1692-1695
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Liu Chien-Wei,Cheng Chin-Lung,Chang-Liao Kuei-Shu,Jeng Jin-Tsong,Dai Bau-Tong,Tsai Chen-Pang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications

2. Multilevel charge storage in Si nanocrystals arranged in double-dot-layers within SiO2

3. Bimetallic oxide nanoparticles CoxMoyO as charge trapping layer for nonvolatile memory device applications

4. Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

5. Characterization of various alloying metal oxide nanoparticles embedded in HfOxNy as charge trapping nodes in nonvolatile memory devices

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1. Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOzcharge trapping layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03

2. Titanium–tungsten nanocrystals embedded in a SiO2/Al2O3gate dielectric stack for low-voltage operation in non-volatile memory;Nanotechnology;2010-05-25