High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs-Reference-Cited by-同舟云学术

High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs

Published:2007-09 Issue:9-10 Volume:84 Page:2063-2066
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Krishnamohan T.,Jungemann C.,Kim D.,Ungersboeck E.,Selberherr S.,Pham A.-T.,Meinerzhagen B.,Wong P.,Nishi Y.,Saraswat K.C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. S.E. Thompson, G. Sun, K. Wu, J. Lim, T. Nishida, IEEE IEDM 2004, 221 224.

2. T. Krishnamohan, Z. Krivokapic, K. Uchida, Y. Nishi, K.C. Saraswat, Symp. VLSI Tech. 2005, 82-83.

3. T. Krishnamohan, D. Kim, C. Jungemann, Y. Nishi, K.C. Saraswat, Symp. VLSI Tech. 2006, 182-183.

4. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

5. T. Tezuka, S. Nakaharai, Y. Moriyama, N. Sugiyama, S.I. Takagi, Symp. VLSI Tech. 2004, 198-199.

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