High-speed and high-quality TSV filling with the direct ultrasonic agitation for copper electrodeposition-Reference-Cited by-同舟云学术

High-speed and high-quality TSV filling with the direct ultrasonic agitation for copper electrodeposition

Published:2017-08 Issue: Volume:180 Page:30-34
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wang Fuliang,Zeng Peng,Wang Yan,Ren Xinyu,Xiao Hongbin,Zhu Wenhui

Funder

Natural Science Foundation of China

China Department of Science & Technology Program 973

Innovation-Driven Project of CSU

Discovery Project of State Key Laboratory of High Performance Complex Manufacturing

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Overview and outlook of through-silicon via (TSV) and 3D integrations;Lau;Microelectron. Int.,2011

2. Modeling the bottom-up filling of through-silicon vias through suppressor adsorption/desorption mechanism;Yang;J. Electrochem. Soc.,2013

3. Three-dimensional integration technology based on wafer bonding with vertical buried interconnections;Koyanagi;IEEE Transactions on Electron Devices,2006

4. Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65-nm strained-Si/low-k CMOS technology;Morrow;Electron Device Letters, IEEE,2006

5. Electrochemical and fill studies of a multicomponent additive package for copper deposition;Taephaisitphongse;J. Electrochem. Soc.,2001

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