Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds-Reference-Cited by-同舟云学术

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Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds

Published:2023-08-08 Issue: Volume:10 Page:1-5
ISSN:
Container-title:2023 24th International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Chen Ke-Xin¹,Gao Li-Yin²,Sun Rong²,Liu Zhi-Quan²

Affiliation:

1. University of Science and Technology of China,School of Material Science and Engineering,Shenyang,China,110016

2. Chinese Academy of Sciences,Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology,Shenzhen,China,518055

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492152.pdf?arnumber=10492152

Reference16 articles.

1. Interaction effect of suppressor concentration and current density on the copper deposition rate in TSV filling process

2. Study on Physical Properties of Ultrasonic-Assisted Copper Electrodeposition in Through Silicon Via

3. Bottom-up Cu filling of annular through silicon vias: Microstructure and texture

4. Orientation-controlled nanotwinned copper prepared by electrodeposition

5. Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via

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