Electrical characterizations of solution-processed dielectric layer of octamethylcyclotetrasiloxane-Reference-Cited by-同舟云学术

Electrical characterizations of solution-processed dielectric layer of octamethylcyclotetrasiloxane

Published:2014-04 Issue: Volume:118 Page:6-10
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Jung Hunsang,Kim Minkeun,Kim Yejin,Oh Sewook,Kang Chi-Jung,Yoon Tae-Sik,Lee Hyun Ho

Funder

Industrial Core Technology Development Program

Ministry of Knowledge Economy

Basic Science Research Program

National Research Foundation of Korea (NRF)

Ministry of Education, Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Silsesquioxane Resins as High-Performance Solution Processible Dielectric Materials for Organic Transistor Applications

2. Electrical characterization of metal–insulator–semiconductor capacitors with xerogel as dielectric

3. Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics

4. Organic thin-film transistors using thin ormosil-based hybrid dielectric

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