Author:
Xue Hao,Razzak Towhidur,Hwang Seongmo,Coleman Antwon,Sohel Shahadat Hasan,Rajan Siddharth,Khan Asif,Lu Wu
Funder
Army Research Office
Defense Advanced Research Projects Agency
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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4. Al0.75Ga0.25N/Al0.60Ga0.40N heterojunction field effect transistor with fT of 40 GHz;Xue;Appl. Phys. Express,2019
5. All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: an approach to make ohmic contact to Al-rich AlGaN channel transistor;Xue;Solid State Electronics,2020
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