Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates-Reference-Cited by-同舟云学术

Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

Published:2006-01 Issue:1 Volume:83 Page:34-36
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

As D.J.,Potthast S.,Fernandez J.,Lischka K.,Nagasawa H.,Abe M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Nitride Semiconductors;Morkoc,2003

2. SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors

3. D.J. As, in: Optoelectronic Properties of Semiconductors and Superlattices, vol. 19, 2003, p. 323.

4. Silicon Carbide;Nagasawa,2003

5. D.J. As, S. Potthast, J. Schörmann, S.F. Li, K. Lischka, H. Nagasawa, M. Abe, in: Proceedings of ICSCRM-2005, Pittsburgh USA, paper FA2.EPI.

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