Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications-Reference-Cited by-同舟云学术

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

Published:2009-07 Issue:7-9 Volume:86 Page:1929-1932
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Yoon Jaesik,Lee Joonmyoung,Choi Hyejung,Park Ju-Bong,Seong Dong-jun,Lee Wootae,Cho Chunhum,Kim Seonghyun,Hwang Hyunsang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

2. Reproducible resistance switching in polycrystalline NiO films

3. Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Functional Materials for Memristor‐Based Reservoir Computing: Dynamics and Applications;Advanced Functional Materials;2023-06-23

2. A High‐Speed True Random Number Generator Based on a Cu x Te 1− x Diffusive Memristor;Advanced Intelligent Systems;2021-06-23

3. Filamentary switching of ReRAM investigated by in-situ TEM;Japanese Journal of Applied Physics;2020-03-04

4. Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices;Nature Communications;2019-01-08

5. Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage;ACS Applied Materials & Interfaces;2017-08-04