Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs

Published:2013-09 Issue: Volume:109 Page:24-27
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wang Cong,Cho Sung-Jin,Kim Nam-Young

Funder

National Research Foundation of Korea (NRF)

the Korean government (MEST)

Research Grant of Kwangwoon University in 2013

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. An analytical parasitic resistance dependent Id–Vd model for planar doped InAlAs/InGaAs/InP HEMT using non-linear charge control analysis

2. Fabrication of 22nm T-gates for HEMT applications

3. Piezoelectric response of AlGaN/GaN-based circular-HEMT structures

4. Effects of crystallization and dopant concentration on the emission behavior of TiO2:Eu nanophosphors

5. Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device

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1. Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT;Materials Science in Semiconductor Processing;2021-11

2. Optical constants of SiO2 from 196 to 1688 nm (0.735–6.33 eV) from 20, 40, and 60 nm films of reactively sputtered SiO2 on Eagle XG® glass by spectroscopic ellipsometry;Surface Science Spectra;2017-12

3. Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure;Technical Physics;2017-08

4. Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation;Applied Physics Letters;2016-09-12

5. Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ SixNyon AlGaN;Japanese Journal of Applied Physics;2014-01-01