Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices-Reference-Cited by-同舟云学术

Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices

Published:2013-09 Issue: Volume:109 Page:160-162
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lee Seok-Hee,Choi Rino,Choi Changhwan

Funder

IT R&D program of MKE/KEIT

Inha university

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Intel, www.intel.com/technology/architecture-silicon/22nm/index.html.

2. G. Bersuker, C.S. Park, H.C. Wen, K. Choi, O. Sharia, A. Demkov, Eur. Solid State Device Res. Conf. (ESSDERC), 2008, p. 134.

3. Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes

4. P. Packan, S. Akbar, M. Armstrong, D. Bergstrom, M. Brazier, et al., Int. Electron Devices Meet. (IEDM), 2009, p. 659.

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