Author:
Wang Bao-Min,Ru Guo-Ping,Jiang Yu-Long,Qu Xin-Ping,Li Bing-Zong,Liu Ran
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. International Technology Roadmap for Semiconductors: 2006 Update, .
2. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
3. H.S. Jung, S.K. Han, H. Lim, Y.K. Choi, C. Lee, M. Lee, Y. You1, Y. Chung, J. Park, E.H. Lee, H.S. Baik, J.-H. Lee, N.-I. Lee, H.-K. Kang, Symp. VLSI Technol., Kyoto, Japan, June 12–14, 2007, p. 196.
4. Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
5. Characteristics of Ni/Gd FUSI for NMOS Gate Electrode Applications
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献