Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry etch gate recessed 120nm T-gate GaAs pHEMTs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs
2. Selective reactive ion etching for short-gate-length GaAs/AlGaAs/InGaAs pseudomorphic modulation-doped field-effect transistors
3. Effects of O2 addition to SiCl4/SiF4 and the thickness of the capping layer on gate recess etching of GaAs-pseudomorphic high electron mobility transistors
4. Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch
5. Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes
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