Author:
Dreeskornfeld L.,Hartwich J.,Hofmann F.,Kretz J.,Landgraf E.,Luyken R.J.,Rösner W.,Schröter R.,Schulz T.,Specht M.,Städele M.,Weber W.,Risch L.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. ITRS 2003 Update. Available from:
2. SOI-Technol.: Mater. Very Large Scale Integr.;Colinge,1997
3. Design considerations for fully depleted SOI transistors in the 25–50 nm gate length regime
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