A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film
2. Self-Heating Effects in Nanoscale FD SOI Devices: The Role of the Substrate, Boundary Conditions at Various Interfaces, and the Dielectric Material Type for the BOX
3. Simulation of self-heating effects in different SOI MOS architectures
4. Investigation of a new modified source/drain for diminished self-heating effects in nanoscale MOSFETs using computer simulation
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1. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET;Nanosystems: Physics, Chemistry, Mathematics;2022-04-29
2. A Novel Nanoscale SOI MOSFET by Using a P-N Junction and an Electrically Hole Free Region to Improve the Electrical Characteristics;Silicon;2021-09-12
3. Impact of High-k Gate Dielectric on Self-Heating Effects in PiFETs Structure;IEEE Transactions on Electron Devices;2020-09
4. Sub-threshold Performance Analysis of Multi-Layered Trapezoidal Trench Gate Silicon On Nothing MOSFET for Low Power Applications;2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS);2020-07
5. Embedding Two P+ Pockets in the Buried Oxide of Nano Silicon on Insulator MOSFETs: Controlled Short Channel Effects and Electric Field;Silicon;2019-12-18
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