Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface?-Reference-Cited by-同舟云学术

Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface?

Published:2005-06 Issue: Volume:80 Page:416-419
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Rashkeev S.N.,van Benthem K.,Pantelides S.T.,Pennycook S.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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2. Physicochemical properties of HfO2 in response to rapid thermal anneal;Lysaght;Appl. Phys. Lett.,2003

3. Grazing-incidence small angle x-ray scattering studies of phase separation in hafnium silicate films;Stemmer;Appl. Phys. Lett.,2003

4. Interface structure and non-stoichiometry in HfO2 dielectrics;Baik;Appl. Phys. Lett.,2004

5. Direct sub-angstrom imaging of a crystal lattice;Nellist;Science,2004

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