Theoretical investigation of in situ k-restore processes for damaged ultra-low-k dielectrics-Reference-Cited by-同舟云学术

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Theoretical investigation of in situ k-restore processes for damaged ultra-low-k dielectrics

Published:2016-04 Issue: Volume:156 Page:121-125
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Förster Anja,Wagner Christian^ORCID,Schuster Jörg,Gemming Sibylle

Funder

Initiative and Networking Funds of the President of the Helmholtz Association

DFG

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Understanding Moore's Law: Four Decades of Innovation;Moore,2006

2. M. R. Baklanov et al., J. Appl. Phys. 113 (4).

3. T. Oszinda et al., Microelectron. Eng. 87 (3).

4. Y. Li et al., J. Appl. Phys. 104 (3).

5. H. Ren et al., J. Appl. Phys. 108 (9).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics;Nanofluid Flow in Porous Media;2020-08-19

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