Damageless Cu chemical mechanical polishing for porous SiOC/Cu interconnects-Reference-Cited by-同舟云学术

Damageless Cu chemical mechanical polishing for porous SiOC/Cu interconnects

Published:2007-11 Issue:11 Volume:84 Page:2615-2619
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kondo Seiichi,Fukaya Kouichi,Yamada Kouji,Miyazaki Tadakazu,Fujita Masahisa,Abe Daisuke,Kunisaki Shuuji,Enomoto Taro,Tominaga Shigeru

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. M. Matsuura, K. Goto, M. Matsumoto, N. Miura, T. Furusawa, A. Andatsu, K. Yonekura, H. Chibahara, A. Ohsaki, in: Proceedings of Advanced Metallization Conference: Asian Session (ADMETA), 2003, p. 120.

2. S. Kondo, B.U. Yoon, S.G. Lee, S. Tokitoh, K. Misawa, T. Yoshie, N. Ohashi, N. Kobayashi, in: Proceedings of VLSI Technology Symposium, 2004, p. 86.

3. S. Kondo, K. Fukaya, N. Ohashi, T. Miyazaki, H. Nagano, Y. Wada, T. Ishibashi, M. Kato, K. Yoneda, E. Soda, S. Nakao, K. Ishigami, N. Kobayashi, in: Proceedings of International Interconnect Technology Conference (IITC), 2006, p. 164.

4. S. Tokitoh, S. Kondo, B.U. Yoon, A. Namiki, K. Inukai, K. Misawa, S. Sone, H.J. Shin, Y. Matsubara, N. Ohashi, N. Kobayashi, in: Proceedings of International Interconnect Technology Conference (IITC), 2004, p. 130.

5. S. Kondo, S. Tominaga, A. Namiki, K. Yamada, D. Abe, K. Fukaya, M. Shimada, N. Kobayashi, in: Proceedings of International Interconnect Technology Conference (IITC), 2005, p. 203.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Model of Particle Contact Area for Friction in Oxide Chemical Mechanical Polishing;ECS Journal of Solid State Science and Technology;2019

2. Role of Dispersant Agent on Scratch Reduction during Copper Barrier Chemical Mechanical Planarization;ECS Journal of Solid State Science and Technology;2018

3. Prospects for dielectric constant reduction in integrated circuits interconnects;MRS Proceedings;2014

4. Robust Ultralow-$k$ Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition;Japanese Journal of Applied Physics;2012-05-21

5. Cu Single Damascene Integration of an Organic Nonporous Ultralow- $k$ Fluorocarbon Dielectric Deposited by Microwave-Excited Plasma-Enhanced CVD;IEEE Transactions on Electron Devices;2012-05