Dielectrics stability for intermediate BEOL in 3D sequential integration-Reference-Cited by-同舟云学术

Dielectrics stability for intermediate BEOL in 3D sequential integration

Published:2017-01 Issue: Volume:167 Page:90-94
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Deprat Fabien^ORCID,Fenouillet-Beranger Claire,Jousseaume Vincent,Guerin Chloé,Beugin Virginie,Rochat Névine,Licitra Christophe,Caubet-Hilloutou Véronique,Benoit Daniel,Imbert Gregory,Rambal Nils,Batude Perrine,Vinet Maud

Funder

French Public Authorities

Qualcomm

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. 3DVLSI with CoolCube process: an alternative path to scaling;Batude,2015

2. Intermediate BEOL process influence on power and performance for 3DVLSI;Sarhan,2015

3. Ultra high density logic designs using transistor-level monolithic 3D integration;Lee,2012

4. FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration;Fenouillet-Beranger,2014

5. New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI;Fenouillet-Beranger,2014

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