Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories-Reference-Cited by-同舟云学术

Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

Published:2013-07 Issue: Volume:107 Page:33-36
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kim Seonghyun,Park Jubong,Woo Jiyong,Cho Chunhum,Lee Wootae,Shin Jungho,Choi Godeuni,Park Sangsu,Lee Daeseok,Lee Byoung Hun,Hwang Hyunsang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

2. Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

3. Complementary resistive switches for passive nanocrossbar memories

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