Author:
Xu Chen,Zhang Sichao,Shao Jinhai,Chen Yifang
Funder
National Natural Science Foundation of China
Shanghai STCSM
Prof Yifang Chen's pump priming fund
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Cramming more components onto integrated circuits[J];Moore;Proc. IEEE,1998
2. On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field[J];Esseni;IEEE Trans. Electron Devices,2004
3. Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness[J];Asenov;IEEE Trans. Electron Devices,2003
4. Modeling line edge roughness effects in sub 100 nanometer gate length devices[C]//Simulation of Semiconductor Processes and Devices, 2000;Oldiges,2000
5. Impact of post-litho linewidth roughness smoothing processes on the post-etch patterning result[J];Foubert;J. Micro/Nanolithogr. MEMS MOEMS,2011
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献