Practical development and implementation of 193nm immersion lithography-Reference-Cited by-同舟云学术

Practical development and implementation of 193nm immersion lithography

Published:2006-04 Issue:4-9 Volume:83 Page:640-642
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

McCallum Martin,Kameyama Masaomi,Owa Soichi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Full-field exposure tools for immersion lithography

2. T. Fujiwara, K. Shiraishi, S. Nagaoka, S. Owa, Y. Ishii, Full-field exposure tools for ArF immersion lithography, in: Proceedings of Second International Symposium on Immersion Lithography, 2005.

3. Development of polarized-light illuminator and its impact

4. M. McCallum, G. Fuller, S. Owa, From hyper NA to low NA, in: Proceedings of Micro and Nano Engineering, 2005, in press.

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