Trap density characterization through low-frequency noise in junctionless transistors-Reference-Cited by-同舟云学术

Trap density characterization through low-frequency noise in junctionless transistors

Published:2013-09 Issue: Volume:109 Page:79-82
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Doria Rodrigo Trevisoli,Trevisoli Renan Doria,de Souza Michelly,Pavanello Marcelo Antonio

Funder

Tyndall National Institute, Ireland

CEA-Leti, France

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. FinFETs and Others Multi-Gate Transistors;Colinge,2008

2. SOI gated resistor: CMOS without junctions;Colinge,2009

3. Low-freqeuncy noise in junctionless multigate transistors;Jang;Appl. Phys. Lett.,2011

4. Analysis of the low-frequency noise of junctionless nanowire transistors operating in saturation;Doria,2011

5. Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior

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