Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results-Reference-Cited by-同舟云学术

Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

Published:2006-02 Issue:2 Volume:83 Page:241-246
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Granzner R.,Polyakov V.M.,Schwierz F.,Kittler M.,Luyken R.J.,Rösner W.,Städele M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

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3. B. Doris, M. Ieong, H. Zhu, Y. Zhang, M. Steen, W. Natzle, S. Callegari, V. Narayanan, J. Cai, S.H. Ku, P. Jamison, Y. Li, Z. Ren, V. Ku, D. Boyd, T. Kanarsky, C. D’Emic, M. Newport, D. Dobuzinsky, S. Deshpande, J. Petrus, R. Jammy, W. Haensch, Device Design Considerations for Ultra-Thin SOI MOSFETs, Tech. Dig. IEDM, 2003 pp. 631–634.

4. B. Doris, M. Ieong, T. Kanarsky, Y. Zhang, R.A. Roy, O. Dokumaci, Z. Ren, F.-F. Jamin, L. Shi, W. Natzle, H.-S. Huang, J. Mezzapelle, A. Mocuta, S. Womack, M. Gribelyuk, E.C. Jones, R.J. Miller, H.-S. Wong, W. Haensch, Extreme Scaling with Ultra-Thin Si Channel MOSFETs, Tech. Dig. IEDM, 2002, pp. 267–270.

5. High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

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