A new etching chemistry for carbon hard mask structures-Reference-Cited by-同舟云学术

A new etching chemistry for carbon hard mask structures

Published:2005-04 Issue:3-4 Volume:77 Page:255-262
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Pears Kevin A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. M. Markert, Private communication, 2003

2. B. Haussdoerfer, M. Stavrev, A. Scire, Applied Materials Technical Conference, 2004

3. J. Stolze, K. Pears, Applied Materials Technical Conference, 2004

4. High rate CH[sub 4]:H[sub 2] plasma etch processes for InP

5. M. Stavrev, A. Scire, M. Vogt, P. Klingbeil, C. Liao, S. Gruss, H-G. Froehlich, K. Mothes, L. Bauch, S. Wege, N. Thyssen, Proc.ASMC (IEEE-SEMI), Boston, Mass, USA, May 4–6, 2004, p. 84

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