High rate CH[sub 4]:H[sub 2] plasma etch processes for InP

Author:

Whelan Colin S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 °C;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-09

2. ICP-RIE etching of self-aligned InP based HBTs with Cl2/N2 chemistry;Microelectronic Engineering;2011-07

3. Single-Step RIE Fabrication Process of Low Loss InP Waveguide Using CH[sub 4]∕H[sub 2] Chemistry;Journal of The Electrochemical Society;2011

4. DFB LD manufactured by nanoimprint lithography;Frontiers of Optoelectronics in China;2010-03-26

5. Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

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