Adhesion improvement of ArF resist pattern depending on BARC material-Reference-Cited by-同舟云学术

Adhesion improvement of ArF resist pattern depending on BARC material

Published:2006-04 Issue:4-9 Volume:83 Page:659-662
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kawai Akira,Moriuchi Takahiro,Niiyama Takayoshi,Kishioka Takahiro,Maruyama Daisuke,Sakaida Yasushi,Matsumoto Takashi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Mechanism of Resist Pattern Collapse during Development Process

2. Atomic Force Microscope

3. A. Kawai, in: Proceedings of SPIE’s 24th International Symposium of Microlithography, Santa Clara, 3677, 1999, p. 565.

4. Collapse Behavior of KrF Resist Line Pattern Analyzed with Atomic Force Microscope Tip

5. Analysis of pattern collapse of ArF excimer laser resist by direct peeling method with atomic force microscope tip

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