Characteristics of Gd2−xLaxO3 high-k films by metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

Characteristics of Gd2−xLaxO3 high-k films by metal-organic chemical vapor deposition

Published:2012-06 Issue: Volume:94 Page:38-43
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Huang Liu-Ying,Li Ai-Dong,Fu Ying-Ying,Zhang Wen-Qi,Liu Xiao-Jie,Wu Di

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference34 articles.

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3. Correlation of optical and microstructural properties of Gd2O3 thin films through phase-modulated ellipsometry and multi-mode atomic force microscopy

4. Spectroscopy of electron states at interfaces of (100)Ge with high-κ insulators

5. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

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