Impact of process conditions on interface and high-κ trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)-Reference-Cited by-同舟云学术

Impact of process conditions on interface and high-κ trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)

Published:2007-09 Issue:9-10 Volume:84 Page:1951-1955
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Zahid M.B.,Degraeve R.,Zhang J.F.,Groeseneken G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID-VG;Kerber;Microelectronic Engineering,2004

2. A. Kerber, E. Cartier, L. Pantisano, M. Rosmeulen, R. Degraeve, T. Kauerauf, G. Groeseneken, H. E. Maes, and U. Schwalke, “Characterization of the VT-instability in SiO2/HfO2 gate dielectrics,” in Proc. 41st Anuu. Int. Reliability Physics Symp. (2003) 41-45.

3. G. Groeseneken, L. Pantisano, L-A. Ragnarsson, R. Degraeve, M. Houssa, T. Kauerauf, P. Roussel, S. De Gendt, and M. Heyns, “Achievements and challenges for the electrical performance of MOSFET’s with high-k gate dielectrics,” in Proc. 11th Int. Symp. Physical and Failure Analysis of IC (2004) 147-155.

4. R. Degraeve, A. Kerber, Ph. Roussel, E. Cartier, T. Kauerauf, L. Pantisano, and G. Groeseneken, “Effect of bulk trap density on HfO2 reliability and yield,” in IEDM Tech Dig. (2003) 935-938.

5. M.B.Zahid, R. Degraeve, L. Pantisano, J. F. Zhang, G. Groeseneken., “Defects Generation in SiO2/HfO2 Studied With Variable tcharge-tdischarge Charge Pumping (VT2CP)”, to be presented at International Reliability Physics Symposium, Phoenix, Arizona, 2007.

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