Self-aligned n-channel GaAs metal–oxide–semiconductor field-effect transistors (MOSFETs) using HfO2 and silicon interface passivation layer: Post-metal annealing optimization-Reference-Cited by-同舟云学术

Self-aligned n-channel GaAs metal–oxide–semiconductor field-effect transistors (MOSFETs) using HfO2 and silicon interface passivation layer: Post-metal annealing optimization

Published:2009-03 Issue:3 Volume:86 Page:291-294
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ok InJo,Kim H.,Zhang M.,Zhu F.,Park S.,Yum J.,Zhao H.,Lee Jack C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Mobility enhancement in surface channel SiGe PMOSFETs with HfO2 gate dielectrics

2. V. Narayanan, A. Callegari, F.R. McFeely, K. Nakamura, P. Jamison, S. Zafar, E. Cartier, A. Steegen, V. Ku, P. Nguyen, K. Milkove, C. Cabral, M. Gribelyuk, C. Wajda, Y. Kawano, D. Lacey, Y. Li, E. Sikorski, F. Duch, H. Ng, C. Wann, R. Jammy, M. Ieong, G. Shahidi, in: IEEE Symposium on VLSI Technology: Digest of Technical Papers, 2004, pp. 192–193.

3. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

4. GaAs MIS structures with SiO2 using a thin silicon interlayer

5. Unpinned GaAs MOS capacitors and transistors

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2. Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy;Applied Physics Letters;2011-06-13