Enhancement of the charge trapping performances with HfAlO composite oxide thin films in SONOS-type nonvolatile memory-Reference-Cited by-同舟云学术

Enhancement of the charge trapping performances with HfAlO composite oxide thin films in SONOS-type nonvolatile memory

Published:2015-02 Issue: Volume:133 Page:88-91
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lan Xuexin,Gong Changjie,Ou Xin,Cao Yanqiang,Sun Chong,Chen Yan,Xu Bo,Xia Yidong,Li Aidong,Yin Jiang,Liu Zhiguo

Funder

National Natural Science Foundation of China

State Key Program for Basic Research of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. A Floating Gate and Its Application to Memory Devices

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4. Memory technology in the future

5. Progress in non-volatile memory devices based on nanostructured materials and nanofabrication

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2. Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices;Nanomaterials;2023-06-01

3. Optimization of MIS type Non-Volatile Memory Device with Al-Doped HfO2 as Charge Trapping Layer;ECS Journal of Solid State Science and Technology;2020-08-24

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5. The Effect of Thermal Treatment Induced Performance Improvement for Charge Trapping Memory with Al2O3/(HfO2)0.9(Al2O3)0.1/Al2O3 Multilayer Structure;ECS Journal of Solid State Science and Technology;2018