Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging-Reference-Cited by-同舟云学术

Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging

Published:2017-06 Issue: Volume:178 Page:235-239
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Strand Jack,Dicks Oliver A.,Kaviani Moloud,Shluger Alexander L.

Funder

Argonne National Laboratory, U.S. Department of Energy Office of Science User Facility

Engineering and Physical Sciences Research Council (EPSRC)

Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan

EPSRC

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Bias Temperature Instability for Devices and Circuits;Grasser,2014

2. Effect of Ge Surface Nitridation on the$hboxGe/HfO_2/hboxAl$MOS Devices

3. Channel hot carriers in SiGe and Ge pMOSFETs;Franco,2014

4. Atomic layer deposition of hafnium oxide on germanium substrates

5. Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relationship Between Electrode Material, Valence Band Offset, and Nonlinearity in the Resistive Switching Behavior of Au/HfO2/M (M = TiN, W, Pt, or AlCu) Metal–Insulator–Metal Devices: Correlation Between Experimental and DFT Calculations;Journal of Electronic Materials;2024-06-15

2. Probing the Polaronic Landscape in Bi₄TaO₈X Perovskite Oxyhalides Photocatalysts;The Journal of Physical Chemistry C;2023-10-16

3. In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication;Micromachines;2023-06-21

4. Review: understanding the properties of amorphous materials with high-performance computing methods;Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences;2023-05-22

5. Dielectric response of high-κ hafnium oxide under finite electric field: nonlinearities from ab initio and experimental points of view;Physical Chemistry Chemical Physics;2023