Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET-Reference-Cited by-同舟云学术

Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET

Published:2011-07 Issue:7 Volume:88 Page:1301-1304
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wan J.,Le Royer C.,Zaslavsky A.,Cristoloveanu S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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3. T. Krishnamohan, D. Kim, S. Raghunathan, K. Saraswat, in: Technical Digest of IEDM, 2008, p. 947.

4. S.H. Kim, H. Kam, C. Hu, T.-J.K. Liu, in:Technical Digest of VLSI Symposium, 2009, pp. 178–179.

5. Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator

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