Analyses of interface adhesion between porous SiO2 low-k film and SiC/SiN layers by nanoindentation and nanoscratch tests-Reference-Cited by-同舟云学术

Analyses of interface adhesion between porous SiO2 low-k film and SiC/SiN layers by nanoindentation and nanoscratch tests

Published:2007-02 Issue:2 Volume:84 Page:319-327
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chang Shou-Yi,Huang Yi-Chung

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections

2. Low dielectric constant materials for microelectronics

3. Dielectric and Barrier Properties of Spin-On Organic Aromatic Low Dielectric Constant Polymers FLARE and SiLK

4. Surface characterization of a low dielectric constant polymer–SiLK[sup ∗] polymer, and investigation of its interface with Cu

5. Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

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