Author:
San Andrés Enrique,Pampillón María Ángela,Feijoo Pedro Carlos,Pérez Raúl,Cañadilla Carmina
Funder
TEC2010-18051 from the Spanish MINECO, and the FPI program
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. C.H. Lee, T. Nishimura, N. Saido, K. Nagashio, K. Kita, A. Toriumi, in: 2009 IEEE International Electron Device Meeting (IEDM), December 8, 2009, Baltimore, USA, p. 457.
2. Passivation of GaAs using gallium-gadolinium oxides
3. Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors
4. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
5. High ε gate dielectrics Gd2O3 and Y2O3 for silicon
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