Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1 ×-nm patterning in isomorphic and anamorphic lithography-Reference-Cited by-同舟云学术

Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1 ×-nm patterning in isomorphic and anamorphic lithography

Published:2017-09 Issue: Volume:181 Page:1-9
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ko Ki-Ho,Moon Yongseung,Jeong Changyeong,Kim Heebom,Jeon Chan-Uk,Oh Hye-Keun

Funder

Samsung

MOTIE

KSRC (Korea Semiconductor Research Consortium

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Principles of Lithography;Levinson,2001

2. Optical Imaging in Projection Microlithography;Wong,2005

3. Fundamental Principles of Optical Lithography: The Science of Microfabrication;Mack,2007

4. Soft X-rays and Extreme Ultraviolet Radiation;Attwood,2000

5. EUV Lithography;Bakshi,2009

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3. Fast mask model for extreme ultraviolet lithography with a slanted absorber sidewall;Applied Optics;2021-07-06

4. Co-optimization method to reduce the pattern distortion caused by polarization aberration in anamorphic EUV lithography;Applied Optics;2019-05-06

5. Mitigating the Impact of Mask Absorber Error on Lithographic Performance by Lithography System Holistic Optimization;Applied Sciences;2019-03-27