Harmonics suppression investigations of pHEMT single-pole-single-throw switches using multi-gate structures-Reference-Cited by-同舟云学术

Harmonics suppression investigations of pHEMT single-pole-single-throw switches using multi-gate structures

Published:2010-12 Issue:12 Volume:87 Page:2592-2595
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chiu Hsien-Chin,Cheng Chia-Shih,Fu Jeffrey S.,Hsueh Kuang-Po

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

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3. Low-insertion-loss DP3T MMIC switch for dual-band cellular phones

4. Minsik Ahn, C.-H. Lee, J. Laskar, in: Circuits and Systems Symposium, 2007, IEEE ISCAS International, vol. 27–30, May 2007, pp. 3283–3286.

5. Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

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2. Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for high-power applications;Journal of the Korean Physical Society;2017-07-04

3. Low frequency noise in field-plate multigate AlGaN/GaN single-pole–single-throw RF switches on silicon substrate;Microelectronics Reliability;2013-03