Low frequency noise in field-plate multigate AlGaN/GaN single-pole–single-throw RF switches on silicon substrate-Reference-Cited by-同舟云学术

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Low frequency noise in field-plate multigate AlGaN/GaN single-pole–single-throw RF switches on silicon substrate

Published:2013-03 Issue:3 Volume:53 Page:405-408
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chiu Hsien-Chin,Lin Chao-Wei,Huang Fan-Hsiu,Kao Hsuan-Ling,Chien Feng-Tso,Chuang Hao-Wei,Chang Kuo-Jen,Gau Yau-Tang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Low-insertion-loss DP3T MMIC switch for dual-band cellular phones;Nagayam;IEEE J Solid State Circ,1999

2. Monolithic transistors SPST switch for L-band;Torres;IEEE Trans Microw Theory Tech,2002

3. A GaAs high power RF single pole dual throw switch IC for digital mobile communication system;Miyatsuzi;IEEE J Solid State Circ,1995

4. High-power operation of III-N MOSHFET RF switches;Yang;IEEE Microw Wireless Compon Lett,2005

5. Insulating gate III-N heterostructure field-effect transistors for high power microwave and switching applications;Khan;IEEE Trans Microw Theory Tech,2003

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