Creation mechanism of metal depression in sputtering process for aluminum interconnects-Reference-Cited by-同舟云学术

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Creation mechanism of metal depression in sputtering process for aluminum interconnects

Published:2007-11 Issue:11 Volume:84 Page:2471-2475
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kim Sang-Yong,Lee Kang-Yeon,Choi Dong-You,Kim Nam-Hoon,Lee Woo-Sun,Chang Eui-Goo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Double-level copper interconnections using selective copper CVD

2. Metallization: Theory and Practice for VLSI and ULSI;Murarka,1983

3. S. Wolf, Silicon Processing for the VLSI Era, vol. 4, Lattice, Sunset Beach, 2002, p. 576.

4. Glow Discharge Process: Sputtering and Plasma Etching;Chapman,1980

5. Handbook of Physical Vapor Deposition Processing;Mattox,1998

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices;Transactions on Electrical and Electronic Materials;2014-06-25

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