Accurate parameter extraction for the simulation of direct structuring by ion beams-Reference-Cited by-同舟云学术

Accurate parameter extraction for the simulation of direct structuring by ion beams

Published:2007-05 Issue:5-8 Volume:84 Page:810-813
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Beuer S.,Rommel M.,Lehrer Ch.,Platzgummer E.,Kvasnica S.,Bauer A.J.,Ryssel H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Focused-Ion-Beam-Induced Gas Etching

2. K.N. Hooghan, K.S. Wills, P.A. Rodriguez, S. O’Connell, in: Proceedings of the 25th International Symposium for Testing and Failure Analysis (ISTFA 99), (1999) 247.

3. C. Lehrer, PhD thesis, University Erlangen-Nuremberg, Germany, 2005.

4. A Monte Carlo computer program for the transport of energetic ions in amorphous targets

5. Y. Yamamura, Y. Itikawa, N. Itoh, Angular dependence of sputtering yields of monoatomic solids, report IPPJ-AM-26, Institute of Plasma Physics, Nagoya University, 1983.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and simulation of surface generation in manufacturing;CIRP Annals;2023

2. Study of silicon dioxide focused ion beam sputtering using electron microscopy imaging and level set simulation;Vacuum;2022-08

3. A review of focused ion beam applications in optical fibers;Nanotechnology;2021-09-02

4. Novel approach based on continuous trench modelling to predict focused ion beam prepared freeform surfaces;Journal of Materials Processing Technology;2018-02

5. Comparison of silicon and 4H silicon carbide patterning using focused ion beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12