Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals-Reference-Cited by-同舟云学术

Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals

Published:2009-07 Issue:7-9 Volume:86 Page:1894-1896
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kaczer B.,Veloso A.,Aoulaiche M.,Groeseneken G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Passivation of oxygen vacancy states and suppression of Fermi pinning in HfO2 by La addition

2. A. Veloso et al., in: Proceedings of the 2008 International Symposium on VLSI Technology, 2008, 14.

3. Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacks

4. B. Kaczer et al., in: Proceedings of International Reliability Physics Symposium (IRPS), Phoenix, AZ, USA, 2008, 20.

5. S.Z. Chang et al., in: Proceedings of the 2008 International Symposium on VLSI Technology, 2008, 62.

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