Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound system-Reference-Cited by-同舟云学术

Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound system

Published:2015-04 Issue: Volume:137 Page:1-4
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Boniardi Mattia,Redaelli Andrea

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. R. Krishnamurthy, First Volume Production Phase Change Memory by Micron. URL http://www.chipworks.com/, 2013.

2. A. Pirovano, A. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, R. Bez, in: IEEE International Electron Devices Meeting, 2003, pp. 29.6.1–29.6.4.

3. Y. Hwang, S. Lee, S. Ahn, S. Lee, K. Ryoo, H. Hong, H. Koo, F. Yeung, J. Oh, H. Kim, W. Jeong, J. Park, H. Horii, Y. Ha, J. Yi, G. Koh, G. Jeong, H. Jeong, K. Kim, in: IEEE International Electron Devices Meeting, 2003, pp. 893–896.

4. Optimization on MOS-Triggered SCR Structures for On-Chip ESD Protection

5. Highly scalable non-volatile and ultra-low-power phase-change nanowire memory

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