FN-degradation of S-RCAT with different grain size and oxidation method

Author:

Park Segeun,Kim Ilgweon,Park Yongjik,Choi Joosun,Roh Yonghan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Se Geun Park et al., International Conference on Solid State Devices and Materials (2005), 624–625.

2. H.J. Oh et al., European Device Solid-State Research Conference (2005), 177–180.

3. Anode hole injection and trapping in silicon dioxide

4. Tze Kiong Ng et al., International Integrated Reliability Workshop Final Report (2004), 148–150.

5. Impact of gate-poly grain structure on the gate-oxide reliability [CMOS]

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