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Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

  • Published:2022-03 Issue: Volume:156 Page:111810
  • ISSN:0960-0779
  • Container-title:Chaos, Solitons & Fractals
  • language:en
  • Short-container-title:Chaos, Solitons & Fractals

Author:

Filatov D.O.,Koryazhkina M.N.,Novikov A.S.,Shishmakova V.A.,Shenina M.E.,Antonov I.N.,Gorshkov O.N.,Agudov N.V.,Carollo A.,Valenti D.,Spagnolo B.

Publisher

Elsevier BV

Subject

General Mathematics,General Physics and Astronomy,Statistical and Nonlinear Physics,Applied Mathematics

Reference48 articles.

1. Resistive switching materials for information processing;Wang;Nat Rev Mater,2020

2. Resistive switching in transition metal oxides;Sawa;Mater Today,2008

3. The missing memristor found;Strukov;Nat Mater,2008

4. Deterministic mechanisms of spiking in diffusive memristors;Ushakov;Chaos Solitons Fractals,2021

5. Nanoscale resistive switching devices for memory and computing applications;Lee;Nano Res,2020

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vliyanie shuma na rezistivnoe pereklyuchenie memristora na osnove stabilizirovannogo dioksida tsirkoniya;Журнал экспериментальной и теоретической физики;2023-12-15

2. Effect of Noise on Resistive Switching of an Yttria Stabilized Zirconia Based Memristor;Journal of Experimental and Theoretical Physics;2023-11

3. Variability in Resistive Memories;Advanced Intelligent Systems;2023-03-14

4. Series Connection of Memristor with Other Discrete Elements: Resistor, Semiconductor Diode, Inductor and Capacitor;Journal of Communications Technology and Electronics;2023-03

5. Series Connection of a Memristor with Other Discrete Elements: Resistor, Semiconductor Diode, Inductive Coil, and Capacitance;Радиотехника и электроника;2023-03-01
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