Author:
Koryazhkina M.N.,Filatov D.O.,Shishmakova V.A.,Shenina M.E.,Belov A.I.,Antonov I.N.,Kotomina V.E.,Mikhaylov A.N.,Gorshkov O.N.,Agudov N.V.,Guarcello C.,Carollo A.,Spagnolo B.
Funder
Lobachevsky State University of Nizhny Novgorod
Government Council on Grants, Russian Federation
Subject
General Mathematics,General Physics and Astronomy,Statistical and Nonlinear Physics,Applied Mathematics
Reference74 articles.
1. A review of resistive switching devices: performance improvement, characterization, and applications;Shi;Small Struct.,2021
2. Understanding memristive switching via in situ characterization and device modeling;Sun;Nat Commun,2019
3. Metrology and physical mechanisms in new generation ionic devices;Celano,2016
4. The missing memristor found;Strukov;Nature,2008
5. Resistive switching: oxide materials, mechanisms, devices and operations;Rupp,2022
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