Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties-Reference-Cited by-同舟云学术

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Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties

Published:2019-12 Issue: Volume:21 Page:100616
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Platonenko Alexander,Gentile Francesco Silvio,Maul Jefferson,Pascale Fabien,Kotomin Eugene A.,Dovesi Roberto

Funder

CINECA

EUROfusion Consortium

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference39 articles.

1. Dynamic behavior of intrinsic point defects in Fz and Cz silicon crystals;Abe;MRS Proc.,1992

2. Defect engineering of Czochralski single-crystal silicon;Sinno;Mater. Sci. Eng.: R: Rep.,2000

3. Mechanical properties of nitrogen-doped CZ silicon crystals;Orlov;Mater. Sci. Semicon. Process.,2002

4. Effects of nitrogen on oxygen precipitation in silicon;Sun;J. Appl. Phys.,1992

5. Calibration curve for infrared spectrophotometry of nitrogen in silicon;Itoh;Appl. Phys. Lett.,1985

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping;Scientific Reports;2024-08-23

2. Nitrogen-Related Defects in Crystalline Silicon;Applied Sciences;2024-02-18

3. First principles analysis on void-reduction mechanism and impact of oxygen in nitrogen-doped CZ-Si crystal;Journal of Crystal Growth;2023-05

4. The origin of infrared bands in nitrogen-doped Si;Journal of Materials Science;2022-02-18

5. Theoretical investigation of nitrogen-vacancy defects in silicon;AIP Advances;2022-02-01

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