The pressure effect on optoelectronic and mechanical properties of chalcopyrite BeSiN2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Mechanics of Materials,General Materials Science
Reference65 articles.
1. The electronic structure of chalcopyrites-bands, point defects and grain boundaries
2. The Preparation and the Third-Order Optical Nonlinearities of Sodium Borosilicate Glass Doped with CuInS2 Quantum Dots
3. Linear and nonlinear optical properties of AgGaS<inf>2</inf>, CuGaS<inf>2</inf>, and CuInS<inf>2</inf>, and theory of the wedge technique for the measurement of nonlinear coefficients
4. Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap
5. Classification of Lattice Defects in the Kesterite Cu2ZnSnS4and Cu2ZnSnSe4Earth-Abundant Solar Cell Absorbers
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1. Design and simulation of BeSiP2-based high-performance solar cell and photosensor;Solar Energy;2024-09
2. First-Principles Study of Potential Transparent Conductive Materials in MXN2 (M = Be, Mg, Ca, Sr, Ba; X = C, Si) Compounds;The Journal of Physical Chemistry C;2023-12-04
3. Investigating the phase transition and properties of CaSiN2 under pressure based on first-principles calculations;Journal of Physics and Chemistry of Solids;2023-12
4. Investigation of optoelectronic & thermoelectric features of ZnCrX2 (X = S Se Te) chalcopyrite semiconductor using mBJ potential;Chinese Journal of Physics;2023-10
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