Enhanced photogalvanic effect in the B3C2P3 photodetector by vacancy, substitution-doping and interstitial atom
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Mechanics of Materials,General Materials Science
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1. Robust photogalvanic effect in the armchair B2C4P2 photodetector by vacancy and substitution-doping;The European Physical Journal B;2024-01
2. A self-powered photodetector based on the C2P4 monolayer;Chemical Physics Letters;2023-11
3. Metal-free Janus α- and β-SiCP4: designing stable and efficient two-dimensional semiconductors for water splitting;Physical Chemistry Chemical Physics;2023
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