Effects of Stone-Wales and applied electric fields on the structure and electrical properties of silicene nanoribbons by SCC-DFTB calculations-Reference-Cited by-同舟云学术

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Effects of Stone-Wales and applied electric fields on the structure and electrical properties of silicene nanoribbons by SCC-DFTB calculations

Published:2023-03 Issue: Volume:34 Page:105233
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Han Yan,Wu Lijun,Wang Zhiqing,Wang Shuang,Qian Ziyue

Funder

National Natural Science Foundation of China

Department of Education of Liaoning Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference58 articles.

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3. Theoretical calculations of structures and properties of one-dimensional silicon-based nanomaterials: particularities and peculiarities of silicon and silicon-containing nanowires and nanotubes;Teo;Coord. Chem. Rev.,2009

4. Experimental evidence for epitaxial Silicene on diboride thin films;Fleurence;Phys. Rev. Lett.,2012

5. Quantum anomalous hall effect and tunable topological states in 3d Transition metals doped Silicene;Zhang;Sci. Rep.,2013

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic characterization of bilayer silicene nanoribbons;Materials Science in Semiconductor Processing;2024-08

2. Structure and electrical properties of bilayer zigzag silicene nanoribbons depending on stone-wales and applied electric fields by SCC-DFTB method;Physica B: Condensed Matter;2024-05

3. Mechanical characteristics and thermal conductivity of defect single-layer buckled honeycomb germanene;Physica Scripta;2024-03-07

4. Influence of Stone-Wales defects on the structural and electronic properties of single-walled silicon nanotubes by SCC-DFTB calculations;Materials Today Communications;2024-03

5. Variation in properties of double-walled zigzag and armchair silicon nanotubes depending on SW defects and applied electric fields by SCC-DFTB method;Materials Science in Semiconductor Processing;2024-03

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