Phase-dependent memristive behaviors in FAPbI3-based memristors-Reference-Cited by-同舟云学术

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Phase-dependent memristive behaviors in FAPbI3-based memristors

Published:2022-12 Issue: Volume:33 Page:104186
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Luo Jundong,Zhao Zhiying,Huang Xiaocong,Wu Yuheng,Liu Zhen,Wei Aixiang,Liu Jun,Zhao Yu,Xiao Zhiming,Yang Xi

Funder

Special Project for Research and Development in Key areas of Guangdong Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference36 articles.

1. Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films;Volodin;Appl. Phys. Lett.,2019

2. Power-efficient nonvolatile ternary content addressable memory with flexible search scope using reconfigurable match line segment and selective search line;Kim;J. Nanosci. Nanotechnol.,2019

3. Direct observation of conducting filaments in tungsten oxide based transparent resistive switching memory;Qian;ACS Appl. Mater. Interfaces,2016

4. Size dependence of resistive switching at nanoscale metal‐oxide interfaces;Hou;Adv. Funct. Mater.,2014

5. Scaling behavior of resistive switching in epitaxial bismuth ferrite heterostructures;Rana;Adv. Funct. Mater.,2014

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1. Light‐adaptive Mimicking Retina with In Situ Image Memorization via Resistive Switching Photomemristor Arrays;Laser & Photonics Reviews;2024-05-03

2. Regulated resistive switching behaviors of Pt/Ni0.5Zn0.5Fe2O4/Pt composite films by oxygen pressure;Ceramics International;2024-05

3. Artificial Synapse Based on a δ-FAPbI₃/Atomic-Layer-Deposited SnO₂ Bilayer Memristor;Nano Letters;2024-04-15

4. Coexistence of analog and digital memristive behaviors in MoO3 based devices for artificial synaptic and logic display applications;Materials Today Chemistry;2024-04

5. Perovskite Based Neuromorphic Devices;Engineering Materials;2024

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