Elevating the resistive memory from binary to ternary by introducing trialkyl phosphorus into binaphthol/ferrocene cores in their polystyrene composites

Author:

Liu Yuan-Zheng,Liu Yue,Chen Bin-Jun,Yang Hai-Long,Lin Xiao-Li,Li Hao-HongORCID,Chen Zhi-Rong

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference58 articles.

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4. Embedding azobenzol-decorated tetraphenylethylene into the polymer matrix to implement a ternary memory device with high working temperature/humidity;Zhou;ACS Appl. Mater. Interfaces,2021

5. Terminal amino monomethylation-triggered intermolecular H- to J-aggregations to realize tunable memory devices;Zhang;J. Mater. Chem. C,2019

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